endstream endobj 180 0 obj <. You have entered an incorrect email address! hÞbbd``b`z$W‚/ Á®kÌ- Ö«Ä*„³@Š™CA:”Ä5&F' ‹‘šÄF Ü$ Static GK topics for Competitive Exams – Check Static GK Competitive Exams || Download Study Materials Here!!!! PN Junction diode is a device made of two semiconductor material joined together with the required amount of impurity. In the case of reverse voltage, a small amount of reverse current will flow through P-N junction. If the applied potential difference is more than the potential barrier, some holes and free electrons enter the depletion region. You just need to take a battery whose values can be varied from (o to V volts), connect its positive terminal to the p-side of pn junction diode and then connect the negative terminal of battery to the n-side of the pn junction diode. This region is called depletion region. PN Junction Diode pn-juntion-Diode. A PN junction is the simplest form of the semiconductor diode. For All Subject Study Materials – Click Here, If one side of a single crystal of pure semiconductor (Ge or Si) is doped with acceptor impurity atoms and the other side is doped with donor impurity atoms, a PN junction is formed as shown in Fig  P region has a high concentration of holes and N region contains a large number of electrons. %%EOF NAPS Releases BHEL Recruitment 2021 – 10th pass Candidates can Apply... APPSC Panchayat Secretary Latest Update on Exam Centers. PN Junction diode. Silicon wafer cleaning (RCA process) In the IC processing wafers it is necessary to maintain the purity and perfection of material. As a result of this, the depletion region disappears and the potential. The diode or PN junction was the first form of semiconductor device to be investigated in the early 1940s when the first real research was undertaken into semiconductor technology. The semiconductor diode is the first invention in a family of semiconductor electronics devices. As soon as the junction is formed, free electrons and holes cross through the junction by the process of diffusion. But today also the most commonly used diode is a semiconductor diode. IGTR Recruitment 2021 OUT – For Engineering Candidates | Apply Here!!! The p-n junction is the fundamental building block of the electronic age. Image Source Forward biasing a pn junction diode is very simple. Working of PN Junction Diode. Static GK topics for Competitive Exams – Check Static GK Competitive... TS Constable Mains Answer Key 2019(Released) – Download TSLPRB Mains Question... Botony Study Materials – Important Topics, Sentence Rearrangement Questions and Answers – Download PDF. The difference of potential from one side of the barrier to the other side is called potential barrier. Chapter 6 pn Junction Diode: I-V Characteristics Learning Goals Similarly holes crossing the junction from the P-region into the. Hence, the potential barrier as well as the width of the depletion region are reduced. 2. Connect the circuit as shown in figure (1) using silicon PN Junction diode. Since a junction forms between a P type and N type material it is called as P-N junction. ... A diode’s working principle depends on the interaction of n-type and p-type semico nductors. Depletion and built-in voltage. If one side of a single crystal of pure semiconductor (Ge or Si) is doped with acceptor impurity atoms and the other side is doped with donor impurity atoms, a PN junction is formed as shown in Fig P region has a high concentration of holes and N region contains a large number of electrons. When the positive terminal of the battery is connected to P-side and negative terminal to the N-side, so that the potential difference acts in opposite direction to the barrier potential, then the PN junction diode is said to be forward biased. In this region, on the left side of the junction, the acceptor atoms become negative ions and on the right side of the junction, the donor atoms become positive ions (Fig 9.8). Due to this characteristic, the diode finds number of applications as given below: Rectification; The conversion of alternating current into direct current is known as rectification. Semiconductor (pn-Junction) Diodes Physically, diodes are formed by the interface between two regions of oppositely doped semiconductor (i.e., pn junction) and are thus, structurally, the simplest semiconductor devices used in electronics. The term PIN diode gets its name from the fact that includes three main layers. Thus a pn junction is formed in diode. The potential barrier is approximately 0.7V for a silicon PN junction and 0.3V for a germanium PN junction. barrier also disappears. 3. Working of a PN junction Current I-V characteristic of Reverse Bias a PN junction diode. Circuit Symbol: Note: From the above, it follows that zero power dissipation occurs in an ideal diode! PN junction diode is one of the fundamental elements in electronics. These materials are N-type, having electrons are majority carrier and P-type material, having holes are majority carrier. One terminal of p-n junction diode is Anode and other is cathode. Forward biasing a pn junction diode is very simple. %PDF-1.5 %âãÏÓ Depletion region created across the pn junction by the initial movement of majority carrier across the junction. Semiconductor PN Junction Diode is the simplest semiconductor device. Lecture 18 The P-N Junction (The Diode). Read online Module 1 Semiconductor (pn-Junction) Diodes book pdf free download link book now. By exploring the electrical properties of silicon, it is possible to acquire an understanding of the inner work-ings of the p-n junction. It allows electric current when forward biased and does not allow electric current when reverse biased. A diode is a two-terminal unidirectional power electronics device. o Thus the P N junction diode allows the electrons flow only when P is positive , o This property is used for the conversion of AC into DC , Which is called rectification. N-region, recombine with electrons in the N-region very close to the junction. The positive donor ions and negative acceptor ions within the depletion region regain electrons and holes respectively. From the foregoing discussion the i-v characteristics of a p-n junction diode can be drawn as shown in Fig 2.2. endstream endobj startxref if January 14, 2018 Pn junction diode pdf. Thus, normal p-n junction diode operates only in forward bias condition. Thus a region is formed, which does not have any mobile charges very close to the junction. Since the depletion region does not contain majority charge carriers, it acts like an insulator. interface or a boundary between two semiconductor material types PN junction diode – Study Material. The depletion width xd, where xd = xp + xn may be calculated from Drift Diffusio n Drift Diffusio n bi d a d V Exams Daily – India's no 1 Education Portal, MGVCL Security Watchman Written Exam Result, GPSC Lecturer (Kumarbhritya) Interview List, Competitive Exam WhatsApp Group – Join Now. The P-N junction diode is a two-terminal device. All books are in clear copy here, and all files are secure so don't worry about it. When the PN junction is reverse biased (Fig), electrons in the N region and holes in the P-region are attracted away from the junction. When the positive terminal of the battery is connected to the N-side and negative terminal to the P-side, so that the applied potential difference is in the same direction as that of barrier potential, the junction is said to be reverse biased. Therefore, no current should flow in the external circuit. T = Diode junction temperature in (o K) Important terms of P-N Junction Diode Breakdown voltage. Hence the depletion region becomes wider and the potential barrier is increased. Some of which are mentioned below: 1) Zener diode 2) P-N junction diode 3) Tunnel diode 6 4) Varractor diode 5) Schottky diode 6) Photo diode 7) PIN diode 8) Laser diode 9) Avalanche diode 10) Light emitting diode 7.0.CONCLUSION In this experiment, the main objectives was fulfilled i.e. The word diode can be explained as ‘Di’ means two and ‘ode’ is obtained from electrode. A. 13 40 30 20 10 40 Forward Bias Region 140 V (volts) 120 80 0.4 2 6 0.8 12 V (volts) Reverse Bias Region Figure 5.1: Diode Characteristics Save my name, email, and website in this browser for the next time I comment. Step Size is not fixed because of non linear curve and vary the X-axis variable (i.e. A p-n junction diode allows electric current when it is forward biased and blocks electric current when it is reverse biased. 211 0 obj <>stream View Notes - Chapter 06_PN Junction Diode.pdf from ELECTRICAL E239 at Information Technology University of the Punjab, Lahore. This reverse current is small, because the number of minority carriers in both regions is very small. 3. Questions you should be able to answer by the end of today’s lecture: Thus, there is a barrier at the junction which opposes the movement of the majority charge carriers. In this paper formation a PN junction diode is explained by VLSI fabrication steps which are stated below. Depletion layer opposes only the the majority carrier not minority carrier. A normal p-n junction diode allows electric current only in one direction. In ideal conditions, this PN junction behaves as a short circuit when it is forward biased, and as an open circuit when it is in the reverse biased. In this type of diode, we dope one side of a semiconductor piece with an acceptor impurity and another side with a donor impurity.A PN junction diode is a two-terminal electronics element, which can be classified as either ‘step graded’ or ‘linear graded’. A pn junction diode is a two terminal single crystal semiconductor device whose one side is doped with acceptors and other side by donors. With proper biasing, PN diode allows current to flow in SINGLE DIRECTION. Forward biasing a PN Junction diode . This potential difference can alter the flow of majority carriers, so that the PN junction can be used as an opportunity for the diffusion of electrons and holes. 179 0 obj <> endobj Doping with acceptor creates p type semiconductor while doping with donors produces n type. Rather than just having a P-type and an N-type layer, it has three layers such as 2. Because of this, the number of negative ions in the P-region and positive ions in the N-region increases. Formation of the p-n junction: the energy band diagram language 3. Photocurrents are produced due to generation of electron-hole pairs. Junction coming to the equilibrium by balancing the Fermi level EF EF The balance is achieved by electrons diffusing into a p-side (bringing an extra negative charge in there) and by the holes diffusing into an n-side (bringing an extra negative charge in there) pn The potential at the N-side is higher than the potential at P-side. When the PN junction is forward biased (Fig ), the applied positive potential repels the holes in the P-region, and the applied negative potential repels the electrons in the N-region, so the charges move towards the junction. For All Subject Study Materials – Click Here. Most electronic devices are made of sili-con. 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